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 SD1100C..C Series
Vishay High Power Products
Standard Recovery Diodes (Hockey PUK Version), 1400 A
FEATURES
* * * * * * * Wide current range High voltage ratings up to 3200 V High surge current capabilities Diffused junction Hockey PUK version Case style B-43 Lead (Pb)-free
RoHS
COMPLIANT
B-43
TYPICAL APPLICATIONS PRODUCT SUMMARY
IF(AV) 1400 A
* * * * *
Converters Power supplies Machine tool controls High power drives Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD1100C..C 04 TO 20 1400 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Range 55 2500 25 13 000 13 600 846 772 400 to 2000 - 40 to 180 25 TO 32 1100 55 2000 25 10 500 11 000 551 503 2500 to 3200 - 40 to 150 UNITS A C A C A
IF(AV)
IF(RMS) IFSM I2 t VRRM TJ
kA2s V C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 08 12 SD1100C..C 16 20 25 30 32 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 2000 2500 3000 3200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 2100 2600 3100 3300 35 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 93535 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 1
SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version), 1400 A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied SD1100C..C 04 TO 20 55 (85) 2500 13 000 13 600 10 930 Sinusoidal half wave, initial TJ = TJ maximum 11 450 846 772 598 546 8460 0.78 0.94 0.35 0.26 1.31 25 TO 32 55 (85) 2000 10 500 11 000 8830 9250 551 503 390 356 5510 0.84 0.88 0.40 m (I > x IF(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum tp = 10 ms sinusoidal wave 0.38 1.44 V kA2s V kA2s A 1400 (795) 1100 (550) UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS SD1100C..C 04 TO 20 25 TO 32 UNITS
- 40 to 180 - 40 to 150 - 55 to 200 0.076 0.038 9800 (1000) 83 B-43
C
K/W N (kg) g
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.007 0.008 0.010 0.015 0.026 DOUBLE SIDE 0.007 0.008 0.010 0.015 0.026 RECTANGULAR CONDUCTION SINGLE SIDE 0.005 0.008 0.011 0.016 0.026 DOUBLE SIDE 0.005 0.008 0.011 0.016 0.026 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93535 Revision: 14-May-08
SD1100C..C Series
Standard Recovery Diodes Vishay High Power Products (Hockey PUK Version), 1400 A
180 M a xim u m A llo w a b le H e a t sin k Te m p e ra t u re (C ) Maxim um Allowable Heatsink Temperature (C) 160 140 120 100 30 80 60 40 0 200 400 600 800 1000 Average Forward Curren t (A) 60 90 120 180
C o ndu ct io n A ng le
SD 1100C..C Series (400V to 2000V ) (Single Side Cooled) R th J- hs (DC) = 0.076 K/W
180 160 140 120 100
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V ) (D o ub le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 3 8 K/ W
Co nd uc tio n Pe rio d
30 80 60 40 20 DC 0 0 500 10 0 0 1500 2 0 00 2 5 00 3 0 00 A v e ra g e F o rw a r d C u rre n t (A ) 60 90 1 2 0 1 8 0
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
180 M a x im u m A llo w a b le H e a tsin k Te m p e ra t u re (C ) 160 140 120
Maxim um Allowable Heatsin k Tem perature (C)
S D 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V ) (S in gle Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 7 6 K /W
150 140 130 120 110 100 90 80 70 60 50 40 0 200 400 600 800 Average Forward Current ( A) 30 60 90
C o nd uct io n An g le
SD 1100C..C Series (2500V to 3200V ) (Single Side Cooled) R thJ- hs (DC) = 0.076 K/W
Co nd uc tio n Pe rio d
100 80 60 9 0 40 30 20 0 400 80 0 12 0 0 1 6 00 A v e ra g e Fo rw a rd C u rre n t (A ) 6 0 1 2 0 1 8 0 DC
120 180
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re ( C )
160 140 120
S D 1 1 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V ) (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 3 8 K /W
Maxim um Allowable Heatsink Tem perature ( C)
180
Co nd uc tio n A ng le
100 30 80 60 40 20 0 4 00 80 0 12 0 0 1 6 00 2 0 00 A v e ra g e F o rw a rd C u rr e n t (A ) 60 90 120 180
150 140 130 120 110 100 90 80 70 60 50 40 30 20 0
SD1100C..C Series (2500V to 3200V) (Single Side Cooled) R th J-hs (DC) = 0.076 K/W
C o ndu ct io n Pe rio d
90 60 30 200 400 600 120 180 DC 800 1000 1200 1400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Document Number: 93535 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 3
SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version), 1400 A
Maximum Allowable Heatsink Tem perature (C) Maxim um Average Forward Power Loss (W ) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 0 4500 SD 1100C..C Series (2500V to 3200V) (Double Side Cooled ) R thJ-h s (D C) = 0.038 K/W 4000 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 Average Forward Current (A)
C o ndu c tio n Pe rio d
C o nd uct io n A ng le
DC 180 120 90 60 30
RM S Lim it
30
60
90
120
180
SD1100C..C Series (400V to 2000V ) TJ = 180C
200
400
600
800 1000 1200 1400
Average Forw ard Curren t (A)
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
Maxim um Allowable Heatsink Temperature (C)
Maximum A verage Forward Power Loss (W )
150 140 130 120 110 100 90 80 70 60 50 40 30 20 0
3000 SD1100C..C Series (2500V to 3200V) (Double Side Cooled) R thJ-h s (D C) = 0.038 K/W 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Average Forw ard Current (A)
C o nd uc tio n Ang le
180 120 90 60 30
RM S Limit
C o nduc tion Pe rio d
30 60 90 120 180 DC 400 800 1200 1600 2000 2400
SD1100C..C Series (2500V to 3200V) TJ = 150C
Avera ge Forward Curren t (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
3500 Maxim um Average Forward Power Loss (W ) 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 Average Forward Curren t (A)
C o nd uct io n A ng le
3500 180 120 90 60 30 RMS Limit Maxim um Average Forw ard Power Loss (W ) 3000 2500 2000 1500
C o ndu ctio n Pe rio d
DC 180 120 90 60 30
RMS Lim it
1000 500 0 0 400 800 1200 1600 2000 2400 Average Forward Current (A) SD1100C..C Series (2500V to 3200V ) TJ = 150C
SD 1100C..C Series (400V to 2000V) TJ = 180C
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93535 Revision: 14-May-08
SD1100C..C Series
Standard Recovery Diodes Vishay High Power Products (Hockey PUK Version), 1400 A
1 2 00 0 P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A ) 1 1 00 0 1 0 00 0 9 0 00 8 0 00 7 0 00 6 0 00 5 0 00 4 0 00 3 0 00 1 10 10 0
N um b er O f E qua l A m plitud e H alf C y cle Cu rre nt Pulse s (N )
Peak Half Sine W ave Forward Curren t (A)
A t A n y R a t e d Lo a d C o n d it io n A n d W it h R a t e d V RRM A p p lie d Fo llo w in g S urg e . In it ia l TJ = 1 8 0 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
11000 10000 9000 8000 7000 6000 5000 4000
M aximum Non Repet itive Surge Current Versus Pulse Train Duration. Initial TJ = 150 C No V oltage Reapplied Rated V R RMReapplied
SD 1 1 0 0 C ..C S e rie s (4 0 0 V t o 2 0 0 0 V )
SD 1100C..C Series (2500V to 3200V) 0.1 Pulse Train Duration (s) 1
3000 0.01
Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
14000 Pea k Half Sine Wave Forward Current (A) 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000
Instan tan eous Forw ard Curren t (A)
Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration . In itial TJ = 180 C No Voltage Reapplied Rated V RRMReapplied
10000 TJ = 25C TJ = 180C
1000
SD1100C..C Series (400V to 2000V ) 0.1 Pulse Train Dura tion (s) 1
SD1100C..C Series (400V to 2000V ) 100 0.5
3000 0.01
1
1.5
2
2.5
3
3.5
4
Instan ta neous Forward V oltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000 Peak Half Sine W ave Forward Curren t (A) 9000 8000 7000 6000 5000 4000 3000 1
In stantaneous Forw ard Current (A)
At An y Rated Load Con dition And W ith Rated V R RMApplied Following Surge. Initial TJ = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
10000 TJ = 25C TJ = 150C
1000
SD 1100C..C Series (2500V to 3200V) 10 10 0
SD 1100C..C Series (2500V to 3200V ) 100 0.5 1 1.5 2 2. 5 3 3.5 4 4.5 5
N um b e r O f Equ al A m plitud e Half Cy c le C urre nt P ulse s (N )
In stantan eous Forward Voltage (V)
Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 18 - Forward Voltage Drop Characteristics
Document Number: 93535 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 5
SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version), 1400 A
0 .1 T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs ( K /W ) St e a d y St at e V a lue R thJ-hs = 0 .0 7 6 K /W ( Sing le Sid e C o o le d ) R thJ-hs = 0 .0 3 8 K /W ( D o u ble Sid e C o o le d ) 0 .0 1 ( D C O p e ra t io n )
SD 1 1 0 0 C ..C Se rie s
0 .0 0 1 0.0 01
0 .01
0. 1 Sq u a re W a v e Pu lse D u rat io n ( s)
1
10
Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
Device code
SD
1
1 2 3 4 5 6
110
2 Diode
0
3
C
4
32
5
C
6
Essential part number 0 = Standard recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case B-43
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95249
www.vishay.com 6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93535 Revision: 14-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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